Correction to Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
نویسندگان
چکیده
منابع مشابه
Band gap engineering of MoS2 upon compression
We study the electronic structure of MoS2 upon both compressive and tensile strains with firstprinciples density-functional calculations. We consider monolayer, bilayer, few-layer and bulk MoS2 in the ±15 % strain range, relevant for recent experiments. We assess the stability of the compression calcualting the critical strain that results in the on-set of buckling for nanoribbons of different ...
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Jingshan Qi, Xiao Li, Xiaofeng Qian, and Ji Feng School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, M...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2019
ISSN: 1530-6984,1530-6992
DOI: 10.1021/acs.nanolett.9b03591